Intel Forges Ahead to 10nm And Will Move Away From Silicon at 7 nm

The very first chips that are based on the new 10nm of Intel are expected early 2017 and late 2016 and the company stated that it is hoping to avoid any delay, which haunted the belabored released of the 14nm Broadwell.

Back in January, at CES, Intel has unveiled the first devices that contain its new chips like Dell XPS 13. Such processors were manufactured under the latest 14nm process, which allow Intel to design much power-efficient and powerful while making these smaller.

To surpass 7nm, Intel confirmed that they will use new materials. According to Demanjo, it is like 10nm will be the end of the silicon. The commonly used alternative for silicon is the III-V semiconductor including InGaAs or indium gallium arsenide, though the company has not provided any particular information yet.

ISSCC 2015 was held in San Francisco where all big players in silicon meet to talk about the newest manufacturing processes and how they could go about overcoming the current blockages to faster, smaller as well as denser computer chips. It is not uncommon for Intel to be present at the said conference and this year's presentation of the company will surprise everyone.

Ars Technica reported that with the 10nm, Intel is hoping to carry the mantle of the Moore's law forward to be another mode while continuing to reduce the cost per transistor. In other terms, everyone will continue to see the chips that consume slightly less power while integrating more features into a single die. 7nm, with the possible shift away from the silicon, is much exciting. The reason behind it is that transistors fashioned out of the III-V semiconductors may consume lesser power while switching a much greater speed. Individually, either of these latest processes are likely to make something different.

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